Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling
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چکیده
منابع مشابه
INTERFACE PROPERTIES AND ELECTRICAL CHARACTERISTICS OF III-V NITRIDE-BASED MISFETs
III-V Nitride Based MISFETs have been studied using AlN/GaN heterostructures grown by MOCVD at the University of Michigan. MIS structures fabricated on such materials showed very low interface state density Dit values of ~1×10cmeV. The maximum drain current of AlN/GaN MISFETs made on these materials was greater than 700mA/mm, while drain-source breakdown was 30V and drain-gate breakdown was 40V...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4961491